Fokker-Planck modeling of Electron Kinetics in Plasmas and Semiconductors
Vladimir Kolobov (

), Robert Arslanbekov, and Alex Fedoseyev
Manager Plasma Technologies, CFD Research Corporation, 215 Wynn Drive,
Huntsville, AL 35805, USA
We will review physical principles and computational methods of solving
multi-dimensional Fokker-Planck equation (FPE) for simulations of electron
kinetics in gas discharge plasmas and semiconductor devices. The
four-dimensional (3 spatial coordinates + energy) FPE is rigorously derived
from the 6D Boltzmann Transport Equation (BTE) in the case when the particle
momentum relaxation occurs faster than energy relaxation. The FPE- based
methods have been recently promoted by several plasma and semiconductor groups
as a very good compromise between physical accuracy and numerical efficiency.
We will describe design and software implementation of our kinetic module, its
current status and applications to electron kinetics in gas discharges and
semiconductors. The kinetic module is coupled to several other modules
enabling self-consistent kinetic simulations of plasmas and semiconductor
devices. The FPE is solved for the Electron Energy Probability Function (EEPF)
and provides macroscopic characteristics (electron density, fluxes, rates of
electron induced chemical reactions, etc). Using these quantities, the
transport of ions and holes is simulated using continuum model. The
electromagnetic fields are calculated by solving Maxwell equations for scalar
electric and vector magnetic potentials. We shall present several samples of
hybrid kinetic simulations of plasma reactors and semiconductor devices. We
will also describe our future work on the extension of deterministic methods
to simulation of distribution functions with arbitrary anisotropy in velocity
space such as beams and ballistic particle transport.