Fokker-Planck modeling of Electron Kinetics in Plasmas and Semiconductors

Vladimir Kolobov ( vik-AT-cfdrc-DOT-com.gif ), Robert Arslanbekov, and Alex Fedoseyev
Manager Plasma Technologies, CFD Research Corporation, 215 Wynn Drive, Huntsville, AL 35805, USA

We will review physical principles and computational methods of solving multi-dimensional Fokker-Planck equation (FPE) for simulations of electron kinetics in gas discharge plasmas and semiconductor devices. The four-dimensional (3 spatial coordinates + energy) FPE is rigorously derived from the 6D Boltzmann Transport Equation (BTE) in the case when the particle momentum relaxation occurs faster than energy relaxation. The FPE- based methods have been recently promoted by several plasma and semiconductor groups as a very good compromise between physical accuracy and numerical efficiency. We will describe design and software implementation of our kinetic module, its current status and applications to electron kinetics in gas discharges and semiconductors. The kinetic module is coupled to several other modules enabling self-consistent kinetic simulations of plasmas and semiconductor devices. The FPE is solved for the Electron Energy Probability Function (EEPF) and provides macroscopic characteristics (electron density, fluxes, rates of electron induced chemical reactions, etc). Using these quantities, the transport of ions and holes is simulated using continuum model. The electromagnetic fields are calculated by solving Maxwell equations for scalar electric and vector magnetic potentials. We shall present several samples of hybrid kinetic simulations of plasma reactors and semiconductor devices. We will also describe our future work on the extension of deterministic methods to simulation of distribution functions with arbitrary anisotropy in velocity space such as beams and ballistic particle transport.