MgS:Eu Thin Films by Laser Pulsed Vapor Deposition Technique for High density
Memory Storage
M. F. Aly, J. L. Park,
M. Syed (
), Z. Hasan
Department of Physics, Temple University, Philadelphia, PA 19122, USA
Europium doped polycrystalline MgS thin films were prepared as a function of
H2S pressure (0.4-1.5 Torr) at the deposition temperature (Td) of 500 oC using
Pulsed Laser Deposition (PLD) method. The effects of H2S pressure on the
optical properties of Eu doped MgS films have been investigated. The emission
of Eu2+ ions incorporated in MgS was measured at a fixed temperature of 7 oK.
The transparency of films increases with increasing the H2S pressure. On the
other hand, Dibye-waller factor (ZPL/Vib) increases with increasing the H2S
pressure having the maximum value at the pressure of ~ 0.7 Torr. Results
indicate that H2S pressure plays very important role for the deposition of
MgS:Eu thin films which is very useful for a memory storage material. The
mechanisms of thin film deposition are also discussed.
