Electronic transport in nanoscale conductors

Massimiliano Di Ventra ( diventra-AT-vt-DOT-edu.gif )
Virginia Tech., Physics, Robeson Hall 0435, 209-A Robeson Hall, Blacksburg VA 24061, USA

Using atomic and molecular wires as components in electronic circuits is an appealing idea: such systems can be synthesized with feature lengths smaller than 1 nm, so if we could assemble them onto a chip, as we do today with solid-state transistors, we would gain orders of magnitude in integration levels. In order to advance such a technology, however, several physical issues that have been a major concern for conventional microelectronics need to be addressed at the nanoscale. I will present an overview of recent work in first-principles calculations of electronic transport in nanoscale conductors for which experimental results are available. In particular, I will discuss the transport mechanism in single organic molecules and the role of contact geometry and chemistry to modulate current-voltage characteristics. [1,2] Transistor-like behavior in such molecular devices will also be discussed. [3] Current-induced forces in molecular [4] and atomic [5] wires will be presented to emphasize the role of resonant and off-resonant states in electromigration as well as the contribution of bound states versus scattering states. Effects of ligands and corresponding low-energy vibrational modes on the switching behavior of molecules [6] will exemplify the versatility of molecular structures in molecular electronics applications. Finally, if time permits, shot noise in nanoscale conductors [7] will be discussed to elucidate the role of chemistry and geometry in steady-state current fluctuations. Work supported in part by NSF, Carilion Biomedical Institute and ACS-Petroleum Research Fund.

References:
  1. M. Di Ventra, S.T. Pantelides, and N.D. Lang, Phys. Rev. Lett. 84, 979 (2000).
  2. M. Di Ventra and N.D. Lang, Phys. Rev. B 65, 045402 (2002).
  3. M. Di Ventra, S.T. Pantelides, and N.D. Lang, Appl. Phys. Lett. 76, 3448 (2000);
  4. M. Di Ventra and S.T. Pantelides, Phys. Rev. B 61, 16207 (2000).
  5. M. Di Ventra, S.T. Pantelides, and N.D. Lang, Phys. Rev. Lett. 88, 046801 (2002).
  6. Z. Yang and M. Di Ventra, submitted.
  7. M. Di Ventra, S.G. Kim, S.T. Pantelides, and N.D. Lang, Phys. Rev. Lett. 86, 288 (2001).
  8. Y.-C. Chang and M. Di Ventra, submitted.